Dielectric properties of Ba0.6Sr0.4TiO3 thin films with various strain states
نویسندگان
چکیده
منابع مشابه
architecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولDielectric properties of ferroelectric thin films with surface transition layers.
By taking into account surface transition layers (STL), the dielectric properties of ferroelectric thin films described by the transverse Ising model are discussed in the framework of the mean field approximation. Functions of the intra-layer and inter-layer couplings are introduced to characterize STL, which makes the model more realistic compared to previous treatment of surface layers using ...
متن کاملPolarization states of polydomain epitaxial Pb„Zr1−xTix...O3 thin films and their dielectric properties
V. G. Kukhar,1 N. A. Pertsev,2,3,* H. Kohlstedt,2,4 and R. Waser2,5 1Scientific Research Institute “Vector”, St. Petersburg, Russia 2Institut für Festkörperforschung and CNI, Forschungszentrum Jülich, D-52425 Jülich, Germany 3A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia 4Department of Material Science and Engineering and Department of Physi...
متن کاملOptical Properties of Dielectric and Semiconductor Thin Films
1. Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1. Historical Note . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2. The General Problem . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.3. Light–Matter Interaction . . . . . . . . . . . . ....
متن کاملPhysical Properties of Reactively Sputter-Deposited C-N Thin Films
This work aims to prepare and study amorphous carbon nitride (CNx) films. Films were deposited by reactive magnetron radiofrequency (RF) sputtering from graphite target in argon and nitrogen mixture discharge at room temperature. The ratio of the gas flow rate was varied from 0.1 to 1. Deposited films were found to be amorphous. Highest Nitrogen concentration achieved was 42 atomic percent whic...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Integrated Ferroelectrics
سال: 2001
ISSN: 1058-4587,1607-8489
DOI: 10.1080/10584580108011950